Electronic Transport Properties of Hole-Doped Sr<sub>1+<i>x</i></sub>La<sub>1-<i>x</i></sub>CrO<sub>4+δ</sub>
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چکیده
منابع مشابه
First principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes
Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...
متن کاملFirst principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes
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boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 1995
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.103.1112